| PART |
Description |
Maker |
| STGE50NB60HD 6704 |
N-CHANNEL 50A - 600V ISOTOP PowerMESH TM IGBT
From old datasheet system
N-CHANNEL 50A - 600V ISOTOP PowerMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| STGE200NB60S |
N-CHANNEL 150A - 600V - ISOTOP PowerMESH IGBT
|
ST Microelectronics
|
| STGE200NB60S |
N-CHANNEL 100A - 600V ISOTOP POWERMESH IGBT
|
ST Microelectronics
|
| STGW50NB60M |
N-CHANNEL 50A - 600V - TO-247 POWERMESH IGBT
|
ST Microelectronics
|
| STGY50NC60WD GY50NC60WD |
N-channel 600V - 50A - Max247 Very fast PowerMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| RURG5060 FN3211 |
50A/ 600V Ultrafast Diode
50A, 600V Ultrafast Diode
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| RHRG5060 FN3920 |
50A/ 600V Hyperfast Diode
50A, 600V Hyperfast Diode
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| STE40NK90ZD |
N-CHANNEL 900V - 0.14 - 40 A ISOTOP Super FREDMeshTM MOSFET
N-CHANNEL 900V - 0.14 OHM - 40A ISOTOP SUPERFREDMESH MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| SSG50C120 SSG50C60 SSG50C100 SSG50C40 |
TRIAC|1.2KV V(DRM)|50A I(T)RMS|TO-208VARM8
TRIAC|600V V(DRM)|50A I(T)RMS|TO-208VARM8 可控硅| 600V的五（DRM）的| 50A条口（T）的有效值|08VARM8
TRIAC|1KV V(DRM)|50A I(T)RMS|TO-208VARM8
TRIAC|400V V(DRM)|50A I(T)RMS|TO-208VARM8
|
|
| 6MBI50F-060 |
IGBT(600V 50A)
|
Fuji Electric
|
| 6MBP50RA06 6MBP50RA060 |
IGBT-IPM(600V/50A)
|
FUJI[Fuji Electric]
|
